丝印：BD1；Package：SOT-23；LOW-POWER, 12-Bit ANALOG-TO-DIGITAL CONVERTER with I2C™ INTERFACE

1FEATURES 23· Complete 12-Bit Data Acquisition System in a Tiny SOT-23 Package · Low Current Consumption: Only 90μA · Integral Nonlinearity: 1LSB Max · Single-Cycle Conversion · Programmable Gain Amplifier Gain = 1, 2, 4, or 8 · 128SPS Data Rate · I2C Interface with Two Available Addresse

文件：1.00862 Mbytes 页数：23 Pages

TI

德州仪器

丝印：BD1；Package：SOT-23；LOW-POWER, 12-Bit ANALOG-TO-DIGITAL CONVERTER with I2C™ INTERFACE

1FEATURES 23· Complete 12-Bit Data Acquisition System in a Tiny SOT-23 Package · Low Current Consumption: Only 90μA · Integral Nonlinearity: 1LSB Max · Single-Cycle Conversion · Programmable Gain Amplifier Gain = 1, 2, 4, or 8 · 128SPS Data Rate · I2C Interface with Two Available Addresse

文件：1.00862 Mbytes 页数：23 Pages

TI

德州仪器

丝印：BD1；Package：SOT-23；LOW-POWER, 12-Bit ANALOG-TO-DIGITAL CONVERTER with I2C™ INTERFACE

1FEATURES 23· Complete 12-Bit Data Acquisition System in a Tiny SOT-23 Package · Low Current Consumption: Only 90μA · Integral Nonlinearity: 1LSB Max · Single-Cycle Conversion · Programmable Gain Amplifier Gain = 1, 2, 4, or 8 · 128SPS Data Rate · I2C Interface with Two Available Addresse

文件：1.00862 Mbytes 页数：23 Pages

TI

德州仪器

丝印：BD1；Package：SOT-23；LOW-POWER, 12-Bit ANALOG-TO-DIGITAL CONVERTER with I2C™ INTERFACE

1FEATURES 23· Complete 12-Bit Data Acquisition System in a Tiny SOT-23 Package · Low Current Consumption: Only 90μA · Integral Nonlinearity: 1LSB Max · Single-Cycle Conversion · Programmable Gain Amplifier Gain = 1, 2, 4, or 8 · 128SPS Data Rate · I2C Interface with Two Available Addresse

文件：1.00862 Mbytes 页数：23 Pages

TI

德州仪器

丝印：BD1；Package：SOT-23；LOW-POWER, 12-Bit ANALOG-TO-DIGITAL CONVERTER with I2C™ INTERFACE

1FEATURES 23· Complete 12-Bit Data Acquisition System in a Tiny SOT-23 Package · Low Current Consumption: Only 90μA · Integral Nonlinearity: 1LSB Max · Single-Cycle Conversion · Programmable Gain Amplifier Gain = 1, 2, 4, or 8 · 128SPS Data Rate · I2C Interface with Two Available Addresse

文件：1.00862 Mbytes 页数：23 Pages

TI

德州仪器

丝印：BD1；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Complementary Pair MOSFET • Ultra-Small Surface Mount Package • ESD Protected • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antim

文件：554.1 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BD1；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Complementary Pair MOSFET • Ultra-Small Surface Mount Package • ESD Protected • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antim

文件：554.1 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BD135；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD135-10；Package：TO-1263L；NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

文件：248.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：BD135-16；Package：TO-1263L；NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

文件：248.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体