丝印：BD1；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Complementary Pair MOSFET  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antim

文件：554.1 Kbytes 页数：7 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD-Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” De

文件：479.44 Kbytes 页数：10 Pages

DIODES

美台半导体

SOIC-8_150mil

DIODES/美台

上传：深圳市纳睿斯电子科技有限公司

X2-DSN1006-3

DIODES/美台

上传：深圳市纳睿斯电子科技有限公司

SOT-323

DIDDES

上传：深圳市华康联电子科技有限公司（销售一部）