零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
BD135 | Silicon NPN Power Transistors DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD136/138/140 APPLICATIONS •Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits | SAVANTIC Savantic, Inc. | ||
BD135 | Plastic Medium Power Silicon NPN Transistor PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium−powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable •DCCurrentGain−hFE=40(Min)@ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
BD135 | EPITAXIAL PLANAR NPN TRANSISTOR GENERALPURPOSEAPPLICATION. FEATURES •HighCurrent.(Max.:1.5A) •LowVoltage(Max.:45V) •DCCurrentGain:hFE=40Min.@IC=0.15A •ComplementarytoBD136. | KECKEC CORPORATION KEC株式会社 | ||
BD135 | Power Transistors NPN Silicon 45,60,80 Volts Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=150mAdc •ComplementarywithBD136,BD138,BD140 | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BD135 | NPN SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORBD135,BD137,andBD139areNPNSiliconEpitaxialPlanarTransistorsdesignedforaudioamplifierandswitchingapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | ||
BD135 | Silicon NPN Power Transistors DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD136/138/140 APPLICATIONS •Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
BD135 | TO-126 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●HighCurrent ●ComplementToBD136,BD138AndBD140 | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
BD135 | TRANSISTOR (NPN) TRANSISTOR(NPN) FEATURES ◾HighCurrent(1.5A) ◾LowVoltage(80V) | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | ||
BD135 | TRANSISTOR (NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
BD135 | NPN Plastic Encapsulated Transistor FEATURES •Highcurrent •ComplementtoBD136,BD138andBD140 | SECOS SeCoS Halbleitertechnologie GmbH | ||
BD135 | NPN EPITAXIAL SILICON POWER TRANSISTORS NPNEPITAXIALSILICONPOWERTRANSISTORS DesignedforuseasAudioAmplifierandDriversUtilizing ComplementaryBD136,BD138,BD140 | CDIL CDIL | ||
BD135 | Silicon NPN transistor in a TO-126F Plastic Package. Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features ComplementtoBD136. Applications Mediumpowerlinearandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
BD135 | Plastic Medium Power Silicon NPN Transistor PlasticMediumPowerSiliconNPNTransistor ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc •BD135,137,139arecomplementarywithBD136,138,140 | MotorolaMotorola, Inc 摩托罗拉 | ||
BD135 | NPN power transistors DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesinhi-fiamplifiersandtelevisioncircuits. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BD135 | NPN SILICON TRANSISTORS Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
BD135 | NPN SILICON TRANSISTORS NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance | SIEMENS Siemens Ltd | ||
BD135 | Medium Power Linear and Switching Applications Features •ComplementtoBD136,BD138andBD140respectively Applications •MediumPowerLinearandSwitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
BD135 | Plastic-Encapsulated Transistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | ||
BD135 | TRANSISTOR (NPN) TRANSISTOR(NPN) FEATURES ●HighCurrent | FS First Silicon Co., Ltd | ||
BD135 | Complementary low voltage transistor Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
低频或音频放大 (LF)_功率放大 (L)
- 封装形式:
直插封装
- 极限工作电压:
45V
- 最大电流允许值:
1.5A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
3
- 可代换的型号:
BD165,BD175,BD226,BD233,BD437,3DA1B,
- 最大耗散功率:
12.5W
- 放大倍数:
- 图片代号:
B-21
- vtest:
45
- htest:
999900
- atest:
1.5
- wtest:
12.5
产品属性
- 产品编号:
BD135
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
NPN
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
500mV @ 50mA,500mA
- 电流 - 集电极截止(最大值):
100nA(ICBO)
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
40 @ 150mA,2V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-225AA,TO-126-3
- 供应商器件封装:
TO-126
- 描述:
TRANS NPN 45V 1.5A TO126
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST专家 |
1629+ |
SOT-32(TO-126) |
7958 |
只做原装正品 |
询价 | ||
ST/意法半导体 |
21+ |
SOT-32-3 |
10000 |
原装公司现货 |
询价 | ||
ST(意法半导体) |
22+ |
SOT-32 |
10000 |
只做原装现货 假一赔万 |
询价 | ||
ST(意法) |
2021+/2022+ |
tray |
5488 |
ST正品现货直销 当天可发货 实单来谈 |
询价 | ||
ST(意法) |
2022+ |
tray |
3800 |
只做原装进口 免费送样 |
询价 | ||
STM |
22+ |
sop |
7850 |
询价 | |||
22+ |
SOT-32-3 (TO-126-3) |
7850 |
特价大甩卖处理 |
询价 | |||
STM |
23+ |
SOT-32-3 (TO-126-3) |
10850 |
原装现货支持送检 |
询价 | ||
ST/意法半导体 |
SOT-32-3 |
6000 |
询价 | ||||
ST/意法半导体 |
2023 |
SOT-32-3 |
6000 |
公司原装现货/支持实单 |
询价 |