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BD135

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @

文件:42.47 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

BD135

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

文件:248.52 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

BD135

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

文件:44.25 Kbytes 页数:8 Pages

PHI

PHI

PHI

BD135

SILICON NPN EPITAXIAL TYPE

FEATURES: . Designed for Complementary Use with BD136, BD138 and BD140.

文件:214.66 Kbytes 页数:3 Pages

TOSHIBA

东芝

BD135

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. FEATURES • High Current. (Max. : 1.5A) • Low Voltage (Max. : 45V) • DC Current Gain : hFE=40Min. @IC=0.15A • Complementary to BD136.

文件:69.95 Kbytes 页数:1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

BD135

NPN EPITAXIAL SILICON POWER TRANSISTORS

NPN EPITAXIAL SILICON POWER TRANSISTORS Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140

文件:252.12 Kbytes 页数:4 Pages

CDIL

BD135

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER

文件:235.37 Kbytes 页数:2 Pages

CENTRAL

BD135

Power Transistors NPN Silicon 45,60,80 Volts

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC = 150mAdc • Complementary with BD136, BD138, BD140

文件:357.96 Kbytes 页数:3 Pages

MCC

BD135

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

文件:100.81 Kbytes 页数:4 Pages

MOTOROLA

摩托罗拉

BD135

NPN Transistor TO-126

Feature: • NPN Plastic Power Transistors • Medium Power Linear and Switching Applications Description Transistor, NPN, TO-126

文件:226.78 Kbytes 页数:3 Pages

MULTICOMP

易络盟

晶体管资料

  • 型号:

    BD135(-6...-16)

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    45V

  • 最大电流允许值:

    1.5A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD165,BD175,BD226,BD233,BD437,3DA1B,

  • 最大耗散功率:

    12.5W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    45

  • htest:

    999900

  • atest:

    1.5

  • wtest:

    12.5

产品属性

  • 产品编号:

    BD135

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 50mA,500mA

  • 电流 - 集电极截止(最大值):

    100nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    40 @ 150mA,2V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-225AA,TO-126-3

  • 供应商器件封装:

    TO-126

  • 描述:

    TRANS NPN 45V 1.5A TO126

供应商型号品牌批号封装库存备注价格
STM
22+
SOT-32-3 (TO-126-3)
7750
询价
ST
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
onsemi
25+
TO-126
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
PHI
05+
原厂原装
50051
只做全新原装真实现货供应
询价
MOT
24+
50
询价
STM
24+
原厂封装
293000
原装现货假一罚十
询价
23+
TO-92L
5000
全新原装的现货
询价
ST/进口原
17+
TO-126
6200
询价
ST
24+
QFP-100
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ST
24+
TO-220
10000
原装现货热卖
询价
更多BD135供应商 更新时间2026-4-17 17:30:00