零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
BCP55-16F | 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-261-4,TO-261AA 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 60V 1A SOT223 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
60V,1ANPNmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V/60V/80V,1ANPNmediumpowertransistors Featuresandbenefits *HighcollectorcurrentcapabilityICand ICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V/60V/80V,1ANPNmediumpowertransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
NPNSiliconAFTransistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconAFTransistors | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
NPNmediumpowertransistors DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNSiliconAFTransistors(ForAFdriverandoutputstagesHighcollectorcurrent) ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP) | SIEMENS Siemens Ltd | SIEMENS | ||
1A,60VNPNSiliconMediumPowerTransistor FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
NPNPlastic-EncapsulateTransistors | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
NPNSiliconAFTransistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconEpitaxialPlanarTransistor Features HighCollectorCurrent LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
NPNSiliconMediumPowerTransistor FEATURES •ForAFDriverandOutputStages •HighCollectorCurrent •LowCollector-EmitterSaturationVoltage | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1APNPmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors 1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage. Table1.Productoverview TypenumberPackage NexperiaJEITA NPNcomplement BCX55BCX52 BCX55-10BCX52-10 BCX55-16 SOT89SC-62 BCX52-16 2.Featuresandbenef | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
产品属性
- 产品编号:
BCP55-16F
- 制造商:
Nexperia USA Inc.
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
- 晶体管类型:
NPN
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
500mV @ 50mA,500mA
- 电流 - 集电极截止(最大值):
100nA(ICBO)
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
100 @ 150mA,2V
- 频率 - 跃迁:
100MHz
- 工作温度:
150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
TO-261-4,TO-261AA
- 供应商器件封装:
SOT-223
- 描述:
TRANS NPN 60V 1A SOT223
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Nexperia(安世) |
23+ |
SOT-223-4 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
Nexperia/安世 |
22+ |
SOT223 |
160000 |
原厂原装正品现货 |
询价 | ||
ADI/亚德诺 |
23+ |
SC70-3 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
NEXPERIA/安世 |
22+ |
SOT223 |
360000 |
进口原装房间现货实库实数 |
询价 | ||
Nexperia(安世) |
2117+ |
SOT-223 |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
NEXPERIA |
1809+ |
SOT-223 |
16750 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
NEXPERIA |
21+ |
SOT223 |
6000 |
原装正品 |
询价 | ||
NEXPERIA/安世 |
23+ |
SOT223 |
6000 |
原装正品假一罚百!可开增票! |
询价 | ||
Nexperia |
2022+ |
- |
6680 |
原厂原装,欢迎咨询 |
询价 | ||
NEXPERIA |
23+ |
原厂原封 |
8000 |
订货1周 原装正品 |
询价 |
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