BC55-16PAS

Marking：CJ；Package：SOT1061D；45V/60V/80V, 1A NPN medium power transistors

Featuresandbenefits *HighcollectorcurrentcapabilityICand ICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond

BC55-16PAS

Marking：CJ；Package：DFN2020D-3；60 V, 1 A NPN medium power transistors

1.Generaldescription NPNmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D) leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityand visibleandsolderablesidepads. 2.Featuresandbenefits •Highcollectorcurrentcapa

BC55-16PAS

Marking：CJ；Package：DFN2020D-3；45V/60V/80V, 1A NPN medium power transistors

BC55-16PASX

Package：3-UDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 1A DFN2020D-3

Nexperia USA Inc.

BCP55-16

NPNSiliconEpitaxialPlanarTransistor

Features HighCollectorCurrent LowCollector-emitterSaturationVoltage

BCP55-16

60V,1ANPNmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP55-16

NPNSiliconAFTransistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

BCP55-16

NPNmediumpowertransistors

DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching.

BCP55-16

NPNSiliconAFTransistors

BCP55-16

NPNSiliconAFTransistors(ForAFdriverandoutputstagesHighcollectorcurrent)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)