丝印：BCP55T；Package：SC-73；60 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：274.26 Kbytes 页数：14 Pages

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60 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：273.32 Kbytes 页数：14 Pages

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60 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：274.26 Kbytes 页数：14 Pages

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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：131.1 Kbytes 页数：7 Pages

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美台半导体

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

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60 V, 1 A NPN medium power transistors

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Table 1. Product Overview Type number\n Package\n PNP complement\n Nexperia\n JEITA\n JEDEC\n BCP55T\n SOT223\n SC-73\n -\n BCP52T\n BCP55-10T\n • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

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Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 1A SOT223-3

DIODES

美台半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：BCP55T/SOT223/SC-73

Nexperia USA Inc.