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BCP56-16

80 V, 1 A NPN medium power transistors

Generaldescription NPNmediumpowertransistorseries. Features ■Highcurrent ■Twocurrentgainselections ■Highpowerdissipationcapability Applications ■Linearvoltageregulators ■Low-sideswitches ■MOSFETdrivers ■Amplifiers

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BCP56-16

NPN Medium Power Transistor

■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP51,BCP52,BCP53

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BCP56-16

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56-16

80 V, 1 A NPN medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56-16

NPN Silicon Epitaxial Planar Transistor

Features HighCollectorCurrent LowCollector-emitterSaturationVoltage

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

BCP56-16

NPN medium power transistors

DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BCP56-16

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES *SuitableforAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat)

Zetex

Zetex Semiconductors

BCP56-16

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP)

SIEMENS

Siemens Ltd

BCP56-16

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCP56-16

Low power NPN Transistor

SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BCP56-16

NPN Silicon AF Transistors

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCP56-16

NPN Plastic-Encapsulate Transistors

MCCMicro Commercial Components

美微科美微科半导体公司

BCP56-16

NPN Silicon AF Transistors

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCP56-16

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-261-4,TO-261AA 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 1A SOT223

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BCP56-16-AU

NPN Low Vce(sat) Transistor

Features SiliconNPNepitaxialtype LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomple

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BCP56-16-AU_R2_000A1

NPN Low Vce(sat) Transistor

Features SiliconNPNepitaxialtype LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomple

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BCP56-16E6327

For AF driver and output stages

NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCP56-16H

80 V, 1 A PNP medium power transistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56-16H

80 V, 1 A NPN medium power transistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56-16-Q

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

产品属性

  • 产品编号:

    BCP56-16

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 50mA,500mA

  • 电流 - 集电极截止(最大值):

    100nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    100 @ 150mA,2V

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-261-4,TO-261AA

  • 供应商器件封装:

    SOT-223

  • 描述:

    TRANS NPN 80V 1A SOT223

供应商型号品牌批号封装库存备注价格
NEXPERIA
19+
SOT223
11000
原厂原装,本地现货库存,假一罚十!
询价
ON
19+
SOT-223
28453
询价
nexperia
22+
SOT-23(SOT-23-3)
3000
原装现货
询价
NEXPERIA/安世
21+
SOT-223
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
NXP(恩智浦)
23+
标准封装
7398
全新原装正品/价格优惠/质量保障
询价
115
497000
15+
0
原厂原装
询价
NXP
17+
SOT-223
90000
NXP一级代理原装进口现货
询价
NXP
16+/17+
SOT223
3500
原装正品现货供应56
询价
NEXPERIA
23+
SOT223
150000
NXP现货商!常备进口原装库存现货!
询价
NXP
17+
SOT-363
9700
绝对原装正品现货假一罚十
询价
更多BCP56-16供应商 更新时间2020-6-4 9:34:00