80 V, 1 A PNP medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

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丝印：P5610H；Package：SC-73；80 V, 1 A NPN medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

文件：1.25919 Mbytes 页数：16 Pages

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丝印：P5610H；Package：SC-73；80 V, 1 A NPN medium power transistors

文件：1.25985 Mbytes 页数：16 Pages

NEXPERIA

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80 V, 1 A NPN medium power transistor

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product Overview Type number\n Package\n PNP complement\n Nexperia\n JEITA\n JEDEC\n BCP56H\n SOT223\n SC-73\n -\n BCP53H\n BCP56-10H\n BCP53-1 • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• High-temperature applications up to 175 °C\n• AEC-Q101 qualified;

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Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT223

Nexperia USA Inc.