丝印：P5610T；Package：SOT223；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

文件：287.1 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：274 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：P5610T；Package：SOT223；80 V, 1 A NPN medium power transistors

文件：275.24 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN Silicon Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package c

文件：144.33 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

文件：74.89 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

文件：161.78 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

文件：74.89 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：P5610T；Package：SOT223；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：287.63 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

80 V, 1 A NPN medium power transistors

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product Overview Type number\n Package\n PNP complement\n Nexperia\n JEITA\n JEDEC\n BCP56T\n SOT223\n SC-73\n -\n BCP53T\n BCP56-10T\n BCP53-1 • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

Nexperia

安世

80 V, 1 A NPN medium power transistors

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type number\n Package\n NPN comlement\n Nexperia\n JEDEC\n  BCP56T-Q\n SOT223\n SC-73\n BCP53T-Q\n BCP56-10T-Q\n BCP53-10T-Q\n • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世