BCP56-10T-Q

Marking：P5610T；Package：SOT223；80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BCP56-10T-QF

Package：TO-261-4，TO-261AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT223

Nexperia USA Inc.

BCP56-10T-QX

Package：TO-261-4，TO-261AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT223

Nexperia USA Inc.

BCX56-10

NPNTRANSISTOR

VOLTAGE45~80.0VoltsCURRENT1.0Ampers FEATURES ●Highcurrent(max.1A). ●Lowvoltage(max.80V).

BCX56-10

NPNSiliconAFTransistors

FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCX51…BCX53(PNP)

BCX56-10

NPNSiliconAFTransistors

FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCX51…BCX53(PNP)

BCX56-10

NPNPlastic-EncapsulateTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •PowerDissipation:PCM=0.5W(Tamb=25°C) •CollectorCurrent:ICM=1.0A •Collector-BaseVoltage:V(BR)CBO=100V •Marking:BCX56=BH,BCX56-10=BK,BCX56-16=BL •EpoxymeetsU

BCX56-10

NPNPlastic-EncapsulateTransistors

BCX56-10

80V,1ANPNmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCX56-10

80V,1ANPNmediumpowertransistors

1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability 3.Applications •Li