丝印：BCP56/10；Package：SOT223；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：249.1 Kbytes 页数：12 Pages

NEXPERIA

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80 V, 1 A NPN medium power transistors

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type number\n Package\n PNP comlement\n Nexperia\n JEDEC\n  BCP56-Q\n SOT223\n SC-73\n BCP53-Q\n BCP56-10-Q\n BCP53-10-Q\n B • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

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Package：TO-261-4，TO-261AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT223

Nexperia USA Inc.

Package：TO-261-4，TO-261AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A SOT223

Nexperia USA Inc.