60 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：273.32 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：P5516T；Package：SOT223；60 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：274.26 Kbytes 页数：14 Pages

NEXPERIA

安世

60 V, 1 A NPN medium power transistors

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Table 1. Product Overview Type number\n Package\n PNP complement\n Nexperia\n JEITA\n JEDEC\n BCP55T\n SOT223\n SC-73\n -\n BCP52T\n BCP55-10T\n • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：BCP55-16T/SOT223/SC-73

Nexperia USA Inc.