丝印：BJ；Package：SOT1061；60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • AEC-Q101 qualified

文件：250.77 Kbytes 页数：12 Pages

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丝印：BJ；Package：HUSON3；60 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.98381 Mbytes 页数：22 Pages

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丝印：CJ；Package：DFN2020D-3；60 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：262.95 Kbytes 页数：11 Pages

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丝印：CJ；Package：SOT1061D；45V/60V/80V, 1A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

文件：1.40185 Mbytes 页数：14 Pages

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丝印：CJ；Package：DFN2020D-3；45V/60V/80V, 1A NPN medium power transistors

文件：1.40285 Mbytes 页数：14 Pages

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60 V, 1 A NPN medium power transistor

NPN medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. PNP complement: BC52PA. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Leadless very small SMD plastic package with medium power capability\n• AEC-Q101 qualified;

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45 V/60 V/80 V, 1 A NPN medium power transistors

NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. • High collector current capability IC and ICM\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified\n• Three current gain selections\n• Leadless very small SMD plastic package with medium power capabilit;

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60 V, 1 A PNP medium power transistors

NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. • High collector current capability IC and ICM\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Two current gain selections\n• Leadless very small SMD plastic package with medium power capability\n• Suitable for Automa;

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Package：3-PowerUDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 1A 3HUSON

Nexperia USA Inc.

Package：3-UDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 1A DFN2020D-3

Nexperia USA Inc.