丝印：BCP53；Package：SC-73；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.83457 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BCP53；Package：SOT-223；PNP Medium Power Transistors

文件：280.17 Kbytes 页数：3 Pages

KEXIN

科信电子

丝印：BCP53/10；Package：SC-73；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.83457 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BCP53/16；Package：SC-73；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.83457 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BCP53-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.31226 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：BCP5316；Package：SOT223；80V PNP MEDIUM POWER TRANSISTOR IN SOT223

Features BVCEO > -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat)

文件：406.13 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP53H；Package：SC-73；80 V, 1 A PNP medium power transistors

General description PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High collector current capability IC and ICM ■ Three current gain selections ■ High power dissipation capability ■ High-temperature applicat

文件：1.27242 Mbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BCP53H；Package：SC-73；80 V, 1 A PNP medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

文件：1.27175 Mbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BCP53H；Package：SOT223；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • High-temperature applications

文件：275.29 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BCP53T；Package：SC-73；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：274 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司