AOD4100

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAOD4100usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasaHighsideswitchinCPUcorepowerconversion. -RoHSCompliant -HalogenFree* Features VDS(V)=

AOI4100

N-Channel30-V(D-S)MOSFET

AOI4100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=53A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

AP4100

HighPerformanceIREnhancedP-Typesiliconp-i-nPhotodiodes

Features OptimizedResponsivityforOperation at1064nm. GuardRingConstruction AntireflectionCoated HermeticallySealedPackage WideRangeofOperatingVoltage(0to-200V) Applications Nd:YAGLaserDetection OpticalCommunications IntrusionAlarmSystems ProcessControlInstrument

AR4100

Lowpowermodesconsumingaslittleas5關Aofcurrent

BFCN-4100

BandpassFilter

BFCN-4100+

BandpassFilter

BRD4100A

Transmitpower:10.5dBm

BRD4100A

EFR32BG2.4GHz10.5dBmRadioBoardBRD4100AReferenceManual

BYV4100

Fastsoft-recoverycontrolledavalancherectifier

DESCRIPTION RuggedglassSOD64package,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES •Glasspassivated •Highmaximumoperatingtemperature •Lowleakagecurrent •Ex