N-Channel Enhancement Mode Power MOSFET

Description ACE17313B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general-purpose applications. Features ⚫ VDS=30V ⚫ ID=100A ⚫ RDS(ON)@VGS=10V, IDS=20A, TYP 3.5mΩ ⚫ RDS(ON)@VGS=4.5

文件：204.47 Kbytes 页数：3 Pages

ACE

N-Channel Enhancement Mode Power MOSFET

Description ACE17313B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general-purpose applications. Features ⚫ VDS=30V ⚫ ID=100A ⚫ RDS(ON)@VGS=10V, IDS=20A, TYP 3.5mΩ ⚫ RDS(ON)@VGS=4.5

文件：204.47 Kbytes 页数：3 Pages

ACE

P-Channel Enhancement Mode Power MOSFET

Description  Backlighting  Power Management Functions  DC-DC Converters Features  VDS=-30V  ID=-36A  RDS(ON)@VGS=-10V,TYP 11 mΩ  RDS(ON)@VGS=-4.5V,TYP17 mΩ

文件：784.27 Kbytes 页数：7 Pages

ACE

P-Channel Enhancement Mode Power MOSFET

Description  Backlighting  Power Management Functions  DC-DC Converters Features  VDS=-30V  ID=-36A  RDS(ON)@VGS=-10V,TYP 11 mΩ  RDS(ON)@VGS=-4.5V,TYP17 mΩ

文件：784.27 Kbytes 页数：7 Pages

ACE

P-Channel Enhancement Mode Power MOSFET

Description  load switch  battery protection applications Features  VDS=-30V  ID=-60A  RDS(ON)@VGS=-10V,TYP 6.6 mΩ  RDS(ON)@VGS=-4.5V,TYP8.5 mΩ

文件：654.69 Kbytes 页数：7 Pages

ACE

P-Channel Enhancement Mode Power MOSFET

Description  load switch  battery protection applications Features  VDS=-30V  ID=-60A  RDS(ON)@VGS=-10V,TYP 6.6 mΩ  RDS(ON)@VGS=-4.5V,TYP8.5 mΩ

文件：654.69 Kbytes 页数：7 Pages

ACE

N-Channel Enhancement Mode Field Effect Transistor

Description The ACE17446B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source in

文件：1.31314 Mbytes 页数：7 Pages

ACE

N-Channel Enhancement Mode Power MOSFET

Description ⚫ Switch Mode Power Supplies ⚫ Personal Computers and Servers ⚫ Telecom Bricks Features ⚫ VDS=30V ⚫ ID=68A ⚫ RDS(ON)@VGS=10V, TYP 3.3mΩ ⚫ RDS(ON)@VGS=4.5V, TYP 4.5mΩ

文件：183.93 Kbytes 页数：2 Pages

ACE

Dual N-Channel Enhancement Mode Field Effect Transistor

Description The ACE18205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protected. ACE18205S is electrically ide

文件：186.46 Kbytes 页数：2 Pages

ACE

3A Low Dropout Linear Regulator

Description ACE1085 is a series of low dropout three terminal regulators with a dropout of 1.3V at 3A load current. Other than a fixed version (Vout＝ 1.8V,2.5V,3.3V,5.0V） , ACE1085 has an adjustable version, The adjustable version can set the output voltage with two external resistors.     Feat

文件：286.18 Kbytes 页数：11 Pages

ACE