Dual N-Channel Enhancement Mode MOSFET

Description The ACE13038A is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These device

文件：204.33 Kbytes 页数：3 Pages

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Dual N-Channel Enhancement Mode MOSFET

Description The ACE13038A is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These device

文件：204.33 Kbytes 页数：3 Pages

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N-Channel Enhancement Mode MOSFET

Description The ACE13043A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage

文件：203.17 Kbytes 页数：3 Pages

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N-Channel Enhancement Mode MOSFET

Description The ACE13043A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage

文件：203.17 Kbytes 页数：3 Pages

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Dual Asymmetric N-Channel Enhancement Mode Power MOSFET

Description ⚫ CPU core power ⚫ Computer / server peripherals ⚫ POL ⚫ Synchronous buck converter ⚫ Telecom DC/DC Features ⚫ VDS (V) =30V, ID = 29A ⚫ RDS(ON) @VGS = 10V, TYP 9.5mΩ ⚫ RDS(ON) @VGS = 4.5V, TYP 12.5mΩ

文件：183.53 Kbytes 页数：2 Pages

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Dual N-Channel Enhancement Mode Power MOSFET

Description ⚫ Motor Control ⚫ Portable Equipment Features ⚫ VDS (V) = 30V ⚫ ID = 8A ⚫ RDS(ON)@VGS = 10V, TYP 7mΩ ⚫ RDS(ON)@VGS = 4.5V, TYP 10mΩ

文件：195.36 Kbytes 页数：2 Pages

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Dual N-Channel Enhancement Mode Power MOSFET

Description ⚫ Motor Control ⚫ Portable Equipment Features ⚫ VDS (V) = 30V ⚫ ID = 8A ⚫ RDS(ON)@VGS = 10V, TYP 7mΩ ⚫ RDS(ON)@VGS = 4.5V, TYP 10mΩ

文件：195.36 Kbytes 页数：2 Pages

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P-Channel Enhancement Mode Power MOSFET

Description ⚫ Backlighting ⚫ Power Management Functions ⚫ DC-DC Converters Features ⚫ VDS =-30V ⚫ ID = -24A ⚫ RDS(ON) @ VGS = -4.5V, TYP 24mΩ ⚫ RDS(ON) @ VGS = -2.5V, TYP 32mΩ

文件：184.54 Kbytes 页数：2 Pages

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60V Complementary Enhancement Mode Power MOSFET

Description ⚫ used in inverter ⚫ other applications Features N-Channel ⚫ VDS= 60V ⚫ ID=5.2A ⚫ RDS(ON)@VGS= 10V, TYP 27 mΩ ⚫ RDS(ON)@VGS= 4.5V, TYP 34 mΩ P-Channel ⚫ VDS= -60V ⚫ ID=-4.2A ⚫ RDS(ON)@VGS= -10V, TYP 50 mΩ ⚫ RDS(ON)@VGS= -4.5V, TYP 62 mΩ

文件：208.39 Kbytes 页数：3 Pages

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Dual P-Channel Enhancement Mode Power MOSFET

Description  Load switch  PWM applications Features  VDS=-30V  ID=-8A  RDS(ON)@VGS=-10V,TYP 18 mΩ  RDS(ON)@VGS=-4.5V,TYP22 mΩ

文件：1.05361 Mbytes 页数：7 Pages

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