N-Channel Enhancement Mode Power MOSFET

Description ⚫ PWM applications ⚫ load switch Features ⚫ VDS=30V, ID=5.6A ⚫ RDS(ON)1@VGS = 10V, TYP 18mΩ ⚫ RDS(ON)2@VGS = 4.5V, TYP 28mΩ

文件：200.19 Kbytes 页数：2 Pages

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N-Channel Enhancement Mode Power MOSFET

Description ⚫ PWM applications ⚫ load switch Features ⚫ VDS=30V, ID=5.6A ⚫ RDS(ON)1@VGS = 10V, TYP 18mΩ ⚫ RDS(ON)2@VGS = 4.5V, TYP 28mΩ

文件：200.19 Kbytes 页数：2 Pages

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N-Channel Enhancement Mode Field Effect Transistor

Features  VDS (V) = 20V  ID = 11.5A  RDS(ON) = 10.5mΩ@VGS=4.5V  RDS(ON) = 14mΩ@VGS=2.5V General Description  load switch  battery protection applications  ESD Protection

文件：717.43 Kbytes 页数：7 Pages

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N-Channel Enhancement Mode Field Effect Transistor

Features  VDS (V) = 20V  ID = 11.5A  RDS(ON) = 10.5mΩ@VGS=4.5V  RDS(ON) = 14mΩ@VGS=2.5V General Description  load switch  battery protection applications  ESD Protection

文件：717.43 Kbytes 页数：7 Pages

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P-Channel Enhancement Mode Power MOSFET

Description ⚫ Battery Switch ⚫ Load switch ⚫ Power management Features ⚫ VDS= -30V ⚫ ID = -10A ⚫ RDS(ON)@VGS= -10V, TYP=14 mΩ ⚫ RDS(ON)@VGS= -4.5V, TYP=23 mΩ

文件：174 Kbytes 页数：2 Pages

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N-Channel Enhancement Mode Power MOSFET

Description ⚫ load switch ⚫ battery protection applications Features ⚫ VDS=30V ⚫ ID=40A ⚫ RDS(ON)@VGS=10V, TYP 5.1mΩ ⚫ RDS(ON)@VGS=4.5V, TYP 6.6mΩ

文件：191.66 Kbytes 页数：2 Pages

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N-Channel Enhancement Mode Power MOSFET

Description ⚫ load switch ⚫ battery protection applications Features ⚫ VDS=30V ⚫ ID=40A ⚫ RDS(ON)@VGS=10V, TYP 5.1mΩ ⚫ RDS(ON)@VGS=4.5V, TYP 6.6mΩ

文件：191.66 Kbytes 页数：2 Pages

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N-Channel Enhancement Mode Power MOSFET

Description ⚫ Synchronous buck converter ⚫ High power density DC/DC ⚫ Motor drive control ⚫ Battery management ⚫ Load switch Features ⚫ VDS=30V ⚫ ID=64.5A ⚫ RDS(ON)@VGS=10V, TYP 3.6mΩ ⚫ RDS(ON)@VGS=4.5V, TYP 4.6mΩ

文件：183.61 Kbytes 页数：2 Pages

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N-Channel Plastic-Encapsulate MOSFETS

Features  Low on-resistance  Fast switching speed  Low voltage drive makes this device ideal for portable equipment  Easily designed drive circuits  Easy to parallel

文件：439.23 Kbytes 页数：5 Pages

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N-Channel Plastic-Encapsulate MOSFETS

Features  Low on-resistance  Fast switching speed  Low voltage drive makes this device ideal for portable equipment  Easily designed drive circuits  Easy to parallel

文件：439.23 Kbytes 页数：5 Pages

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