ACE13019BKM+H

N-Channel Plastic-Encapsulate MOSFETS

Features Lowon-resistance Fastswitchingspeed Lowvoltagedrivemakesthisdeviceidealforportableequipment Easilydesigneddrivecircuits Easytoparallel

ACE13038A

Dual N-Channel Enhancement Mode MOSFET

Description TheACE13038AistheDualN-Channelenhancementmodepowerfieldeffecttransistorsare producedusinghighcelldensity,DMOStrenchtechnology.Thishigh-densityprocessisespecially tailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thesedevice

ACE13038AHM+H

Dual N-Channel Enhancement Mode MOSFET

Description TheACE13038AistheDualN-Channelenhancementmodepowerfieldeffecttransistorsare producedusinghighcelldensity,DMOStrenchtechnology.Thishigh-densityprocessisespecially tailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thesedevice

ACE13043A

N-Channel Enhancement Mode MOSFET

Description TheACE13043AistheN-Channellogicenhancementmodepowerfieldeffecttransistorsare producedusinghighcelldensity,DMOStrenchtechnology. Thishigh-densityprocessisespeciallytailoredtominimizeon-stateresistance. Thesedevicesareparticularlysuitedforlowvoltage

ACE13043ACM+H

N-Channel Enhancement Mode MOSFET

Description TheACE13043AistheN-Channellogicenhancementmodepowerfieldeffecttransistorsare producedusinghighcelldensity,DMOStrenchtechnology. Thishigh-densityprocessisespeciallytailoredtominimizeon-stateresistance. Thesedevicesareparticularlysuitedforlowvoltage

ACE13810B

Dual Asymmetric N-Channel Enhancement Mode Power MOSFET

Description ⚫CPUcorepower ⚫Computer/serverperipherals ⚫POL ⚫Synchronousbuckconverter ⚫TelecomDC/DC Features ⚫VDS(V)=30V,ID=29A ⚫RDS(ON)@VGS=10V,TYP9.5mΩ ⚫RDS(ON)@VGS=4.5V,TYP12.5mΩ

ACE13818B

Dual N-Channel Enhancement Mode Power MOSFET

Description ⚫MotorControl ⚫PortableEquipment Features ⚫VDS(V)=30V ⚫ID=8A ⚫RDS(ON)@VGS=10V,TYP7mΩ ⚫RDS(ON)@VGS=4.5V,TYP10mΩ

ACE13818BPD+H

Dual N-Channel Enhancement Mode Power MOSFET

Description ⚫MotorControl ⚫PortableEquipment Features ⚫VDS(V)=30V ⚫ID=8A ⚫RDS(ON)@VGS=10V,TYP7mΩ ⚫RDS(ON)@VGS=4.5V,TYP10mΩ

ACE14435B

P-Channel Enhancement Mode Power MOSFET

Description ⚫Backlighting ⚫PowerManagementFunctions ⚫DC-DCConverters Features ⚫VDS=-30V ⚫ID=-24A ⚫RDS(ON)@VGS=-4.5V,TYP24mΩ ⚫RDS(ON)@VGS=-2.5V,TYP32mΩ

ACE14614B

60V Complementary Enhancement Mode Power MOSFET

Description ⚫usedininverter ⚫otherapplications Features N-Channel ⚫VDS=60V ⚫ID=5.2A ⚫RDS(ON)@VGS=10V,TYP27mΩ ⚫RDS(ON)@VGS=4.5V,TYP34mΩ P-Channel ⚫VDS=-60V ⚫ID=-4.2A ⚫RDS(ON)@VGS=-10V,TYP50mΩ ⚫RDS(ON)@VGS=-4.5V,TYP62mΩ