N-Channel Enhancement Mode Field Effect Transistor

Features  VDS (V) = 20V  ID = 11.5A  RDS(ON) = 10.5mΩ@VGS=4.5V  RDS(ON) = 14mΩ@VGS=2.5V General Description  load switch  battery protection applications  ESD Protection

文件：717.43 Kbytes 页数：7 Pages

ACE

N-Channel Enhancement Mode Field Effect Transistor

Features  VDS (V) = 20V  ID = 11.5A  RDS(ON) = 10.5mΩ@VGS=4.5V  RDS(ON) = 14mΩ@VGS=2.5V General Description  load switch  battery protection applications  ESD Protection

文件：717.43 Kbytes 页数：7 Pages

ACE

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ACE ele

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文件：649.47 Kbytes 页数：7 Pages

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Short IESNA Type II beam for narrow roads or high poles with extremely low glare

文件：1.44675 Mbytes 页数：6 Pages

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SPARKFUN