P-Channel Enhancement Mode Field Effect Transistor

Description The ACE1550B combines advanced trench MOSFET technology with a low resistance package to provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones, Pagers. Features • VDS(V) =-20V • ID=-0.7A • RDS(ON)

文件：676.25 Kbytes 页数：7 Pages

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N-Channel Enhancement Mode Field Effect Transistor

Description The ACE1551B combines advanced trench MOSFET technology with a low resistance package to provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones, Pagers. Features • VDS =20V • ID=0.7A • RDS(ON)

文件：669.1 Kbytes 页数：7 Pages

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N-Channel Enhancement Mode Field Effect Transistor

Description The ACE1557B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. Features ● 30V/5A =-30V ● RDS(ON)=29mΩ @ VGS=10V ● RDS(ON)=41mΩ @ VGS=4.5V

文件：601.3 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

Description ACE1621B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • VDS(V) =-30V • ID=-60A • RD

文件：705.26 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode MOSFET

Description The ACE16242A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage

文件：241.18 Kbytes 页数：3 Pages

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N-Channel Enhancement Mode MOSFET

Description The ACE16242A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage

文件：241.18 Kbytes 页数：3 Pages

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N & P Pair Enhancement Mode MOSFET

Description The ACE16302A is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devi

文件：456.66 Kbytes 页数：9 Pages

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N & P Pair Enhancement Mode MOSFET

Description The ACE16302A is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devi

文件：456.66 Kbytes 页数：9 Pages

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N-Channel Enhancement Mode Field Effect Transistor

Description ACE1613B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. This device has specifically been designed to minimiz

文件：614.75 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Power MOSFET

General Description ⚫ Power Supply ⚫ LED Backlighting Features ⚫ VDS=60V ⚫ ID=51A ⚫ RDS(ON)@VGS=10V, TYP 6.7 mΩ ⚫ RDS(ON)@VGS=4.5V, TYP 12 mΩ

文件：179 Kbytes 页数：2 Pages

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