ACE16604B

N-Channel Enhancement Mode Power MOSFET

GeneralDescription ⚫PowerSupply ⚫LEDBacklighting Features ⚫VDS=60V ⚫ID=51A ⚫RDS(ON)@VGS=10V,TYP6.7mΩ ⚫RDS(ON)@VGS=4.5V,TYP12mΩ

ACE17313B

N-Channel Enhancement Mode Power MOSFET

Description ACE17313BusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgate charge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneral-purposeapplications. Features ⚫VDS=30V ⚫ID=100A ⚫RDS(ON)@VGS=10V,IDS=20A,TYP3.5mΩ ⚫RDS(ON)@VGS=4.5

ACE17313BZM+H

N-Channel Enhancement Mode Power MOSFET

Description ACE17313BusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgate charge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneral-purposeapplications. Features ⚫VDS=30V ⚫ID=100A ⚫RDS(ON)@VGS=10V,IDS=20A,TYP3.5mΩ ⚫RDS(ON)@VGS=4.5

ACE17409B

P-Channel Enhancement Mode Power MOSFET

Description Backlighting PowerManagementFunctions DC-DCConverters Features VDS=-30V ID=-36A RDS(ON)@VGS=-10V,TYP11mΩ RDS(ON)@VGS=-4.5V,TYP17mΩ

ACE17409BPD+H

P-Channel Enhancement Mode Power MOSFET

Description Backlighting PowerManagementFunctions DC-DCConverters Features VDS=-30V ID=-36A RDS(ON)@VGS=-10V,TYP11mΩ RDS(ON)@VGS=-4.5V,TYP17mΩ

ACE17411B

P-Channel Enhancement Mode Power MOSFET

Description loadswitch batteryprotectionapplications Features VDS=-30V ID=-60A RDS(ON)@VGS=-10V,TYP6.6mΩ RDS(ON)@VGS=-4.5V,TYP8.5mΩ

ACE17411BPD-1+H

P-Channel Enhancement Mode Power MOSFET

Description loadswitch batteryprotectionapplications Features VDS=-30V ID=-60A RDS(ON)@VGS=-10V,TYP6.6mΩ RDS(ON)@VGS=-4.5V,TYP8.5mΩ

ACE17446B

N-Channel Enhancement Mode Field Effect Transistor

Description TheACE17446BusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.Thesourceleadsareseparatedtoallowakelvinconnectiontothesource,whichmaybeusedtobypassthesourcein

ACE17904B

N-Channel Enhancement Mode Power MOSFET

Description ⚫SwitchModePowerSupplies ⚫PersonalComputersandServers ⚫TelecomBricks Features ⚫VDS=30V ⚫ID=68A ⚫RDS(ON)@VGS=10V,TYP3.3mΩ ⚫RDS(ON)@VGS=4.5V,TYP4.5mΩ

ACE18205S

Dual N-Channel Enhancement Mode Field Effect Transistor

Description TheACE18205SusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBatteryprotectionorin otherSwitchingapplication.ItisESDprotected. ACE18205Siselectricallyide