Description

The ACE16302A is the N- and P-Channel enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology. This high density process is especially tailored

to minimize on-state resistance and provide superior switching performance. These devices are

particularly suited for low voltage applications such as notebook computer power management and other

battery powered circuits where high-side switching, low in-line power loss and resistance to transients are

needed.

Features

 N-Channel

30V/2.8A,RDS(ON)= 60mΩ@VGS=10V

30V/2.3A,RDS(ON)= 80mΩ@VGS=4.5V

 P-Channel

-30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V

-30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V

 Super high density cell design for extremely low RDS (ON)

 Exceptional on-resistance and maximum DC current capability

Applications

 Power Management in Note book

 Portable Equipment

 Battery Powered System

 DC/DC Converter

 Load Switch

 DSC

 LCD Display inverter