Dual P-Channel Enhancement Mode Power MOSFET

Description  Load switch  PWM applications Features  VDS=-30V  ID=-8A  RDS(ON)@VGS=-10V,TYP 18 mΩ  RDS(ON)@VGS=-4.5V,TYP22 mΩ

文件：1.05361 Mbytes 页数：7 Pages

ACE

Dual P-Channel Enhancement Mode Power MOSFET

Description  Load switch  PWM applications Features  VDS=-30V  ID=-8A  RDS(ON)@VGS=-10V,TYP 18 mΩ  RDS(ON)@VGS=-4.5V,TYP26 mΩ

文件：1.05376 Mbytes 页数：7 Pages

ACE

Dual P-Channel Enhancement Mode Power MOSFET

Description  Load switch  PWM applications Features  VDS=-30V  ID=-8A  RDS(ON)@VGS=-10V,TYP 18 mΩ  RDS(ON)@VGS=-4.5V,TYP26 mΩ

文件：1.05376 Mbytes 页数：7 Pages

ACE

Dual N-Channel Enhancement Mode Power MOSFET

Description ⚫ DC-DC Converter ⚫ LCD Display Backlight Features ⚫ VDS= 40V ⚫ ID = 5.7A ⚫ RDS(ON) @VGS = 10V, TYP23mΩ ⚫ RDS(ON) @VGS = 4.5V, TYP36mΩ

文件：229.45 Kbytes 页数：3 Pages

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Dual N-Channel Enhancement Mode Power MOSFET

Description ⚫ DC-DC Converter ⚫ LCD Display Backlight Features ⚫ VDS= 40V ⚫ ID = 5.7A ⚫ RDS(ON) @VGS = 10V, TYP23mΩ ⚫ RDS(ON) @VGS = 4.5V, TYP36mΩ

文件：229.45 Kbytes 页数：3 Pages

ACE

P-Channel Enhancement Mode Field Effect Transistor

Description The ACE1500B is P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Features •

文件：758.44 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. Features • VDS (V)=20V • ID=6.5A (VGS=4.5V) • RDS(ON)

文件：397.07 Kbytes 页数：6 Pages

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P-Channel Enhancement Mode Field Effect Transistor

Description Line current interrupter in telephone sets Relay High speed and line transformer drivers. Features • VDS(V)=-50V, ID=-0.13A • RDS(ON)

文件：550.76 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

Features • Low On-Resistance • Fast Switching Speed • Low-voltage drive • Easily designed drive circuits • We declare that the material of product is ROHS compliant. • ESD Protected:2000V

文件：719.95 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other bat

文件：810.6 Kbytes 页数：5 Pages

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