Automotive grade common-mode chip inductor

Product features • AEC-Q200 qualified • 1812 (4532 metric) package • Impedance range from 700 ohms to 15000 ohms • Inductance range from 11 uH to 200 uH • Moisture sensitivity level (MSL): 1 Applications • Controller area network (CAN) • Ethernet architectures • Automotive signal line

文件：1.05475 Mbytes 页数：5 Pages

EATON

伊顿

Automotive grade common-mode chip inductor

Product features • AEC-Q200 qualified • 1812 (4532 metric) package • Impedance range from 700 ohms to 15000 ohms • Inductance range from 11 uH to 200 uH • Moisture sensitivity level (MSL): 1 Applications • Controller area network (CAN) • Ethernet architectures • Automotive signal line

文件：1.05475 Mbytes 页数：5 Pages

EATON

伊顿

P-Channel Enhancement Mode MOSFET

Description The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.     Features • VDS=-20V • RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ • RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ • Advanced trench process technology •

文件：97.51 Kbytes 页数：5 Pages

ACE

P-Channel Enhancement Mode MOSFET

Description The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.     Features • VDS=-20V • RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ • RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ • Advanced trench process technology •

文件：97.51 Kbytes 页数：5 Pages

ACE

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

文件：2.18303 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

文件：2.18303 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

Description The ACE2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general applications. Features • VDS=-20V, ID=-4.1A • RDS(ON)

文件：968.12 Kbytes 页数：6 Pages

ACE

Two-wire Serial EEPROM

Description The ACE24C02A provides low operation voltage of 2048 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 256 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage op

文件：279.7 Kbytes 页数：14 Pages

ACE

Two-wire Serial EEPROM

Description The ACE24C02A provides low operation voltage of 2048 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 256 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage op

文件：279.7 Kbytes 页数：14 Pages

ACE

Two-wire Serial EEPROM

Description The ACE24C02A provides low operation voltage of 2048 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 256 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage op

文件：279.7 Kbytes 页数：14 Pages

ACE