P-Channel Enhancement Mode Field Effect Transistor

Description The ACE2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general applications. Features • VDS=-20V, ID=-4.1A • RDS(ON)

文件：968.12 Kbytes 页数：6 Pages

ACE

P-Channel Enhancement Mode MOSFET

文件：601.14 Kbytes 页数：7 Pages

ACE

Silicon Complementary Transistors Darlington Driver

Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.

文件：23.17 Kbytes 页数：2 Pages

NTE

LinCMOSE PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：748.45 Kbytes 页数：51 Pages

TI

德州仪器

LinCMOSE PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：748.45 Kbytes 页数：51 Pages

TI

德州仪器