P-Channel Enhancement Mode Field Effect Transistor

Description The ACE2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general applications. Features • VDS=-20V, ID=-4.1A • RDS(ON)

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ACE

P-Channel Enhancement Mode MOSFET

文件：601.14 Kbytes 页数：7 Pages

ACE

P - Channel 40V (D-S) MOSFET

These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered

文件：140.24 Kbytes 页数：3 Pages

AnalogPower

Programming ST10F27x/F25x CAN interrupt drivers

文件：176.07 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

STANDARD LED LAMPS(ROUND TYPES)

STANDARD LED LAMPS (ROUND TYPES) Notes: 1. All Dimensions are in millimeters (inches). 2. Tolerance is ±0.25mm (.010²)

文件：1.00341 Mbytes 页数：2 Pages

YSTONE

早安股份