N-Channel Enhancement Mode Power MOSFET

Description ACE17313B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general-purpose applications. Features ⚫ VDS=30V ⚫ ID=100A ⚫ RDS(ON)@VGS=10V, IDS=20A, TYP 3.5mΩ ⚫ RDS(ON)@VGS=4.5

文件：204.47 Kbytes 页数：3 Pages

ACE

N-Channel Enhancement Mode Power MOSFET

Description ACE17313B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general-purpose applications. Features ⚫ VDS=30V ⚫ ID=100A ⚫ RDS(ON)@VGS=10V, IDS=20A, TYP 3.5mΩ ⚫ RDS(ON)@VGS=4.5

文件：204.47 Kbytes 页数：3 Pages

ACE

MOSFET

ACE ele

N-Channel Enhancement Mode Power MOSFET

Description ACE17313B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general-purpose applications. Features ⚫ VDS=30V ⚫ ID=100A ⚫ RDS(ON)@VGS=10V, IDS=20A, TYP 3.5mΩ ⚫ RDS(ON)@VGS=4.5

文件：204.47 Kbytes 页数：3 Pages

ACE

IESNA Type III (medium) beam with excellent back light control

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LEDIL

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文件：9.95953 Mbytes 页数：41 Pages

Maxim

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