C17313数据手册原装现货美信LEDIL-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
C17313	文件：2.29138 Mbytes Page：5 Pages	IESNA Type III (medium) beam with excellent back light control 文件：2.29138 Mbytes 页数：5 Pages	LEDIL	LEDIL
MAX17313	文件：9.95953 Mbytes Page：41 Pages	Evaluation Kits 文件：9.95953 Mbytes 页数：41 Pages	Maxim 美信	Maxim
ACE17313B	文件：204.47 Kbytes Page：3 Pages	N-Channel Enhancement Mode Power MOSFET Description ACE17313B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general-purpose applications. Features ⚫ VDS=30V ⚫ ID=100A ⚫ RDS(ON)@VGS=10V, IDS=20A, TYP 3.5mΩ ⚫ RDS(ON)@VGS=4.5 文件：204.47 Kbytes 页数：3 Pages	ACE	ACE
ACE17313BZM+H	文件：204.47 Kbytes Page：3 Pages	N-Channel Enhancement Mode Power MOSFET Description ACE17313B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general-purpose applications. Features ⚫ VDS=30V ⚫ ID=100A ⚫ RDS(ON)@VGS=10V, IDS=20A, TYP 3.5mΩ ⚫ RDS(ON)@VGS=4.5 文件：204.47 Kbytes 页数：3 Pages	ACE	ACE

更多C17313供应商更新时间2025-10-11 16:45:00