Dual N-Channel Enhancement Mode Field Effect Transistor

Description The ACE18205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protected. ACE18205S is electrically ide

文件：186.46 Kbytes 页数：2 Pages

ACE

MOSFET

ACE ele

10/100 BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS

文件：21.87 Kbytes 页数：1 Pages

RHOMBUS-IND

Input module

文件：92.52 Kbytes 页数：1 Pages

FESTOFesto Corporation.

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