6ED2

Medium Performance Compact EMI Power Inlet Filter

6ED2230S12C

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

Features InfineonThinFilmSOItechnology Floatingchanneldesignedforbootstrapoperation Fullyoperationalto+1200V Toleranttonegativetransientvoltageupto-100V(pulsewidthsupto700ns) Gatedrivesupplyrangefrom12Vto20V 25VVCCvoltagesupply(maximum) 3

6ED2230S12CX7SA1

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

Features InfineonThinFilmSOItechnology Floatingchanneldesignedforbootstrapoperation Fullyoperationalto+1200V Toleranttonegativetransientvoltageupto-100V(pulsewidthsupto700ns) Gatedrivesupplyrangefrom12Vto20V 25VVCCvoltagesupply(maximum) 3

6ED2231S12T

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features InfineonThin-Film-SOItechnology Fullyoperationalto+1200V OptimizedforIGBT(insulatedgatebipolartransistor) /SiC(Siliconcarbide)MOSFET IntegratedUltra‐fastBootstrapDiode Floatingchanneldesignedforbootstrapoperation Outputsource/sinkcurrentcapabil

6ED2231S12TXUMA1

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features InfineonThin-Film-SOItechnology Fullyoperationalto+1200V OptimizedforIGBT(insulatedgatebipolartransistor) /SiC(Siliconcarbide)MOSFET IntegratedUltra‐fastBootstrapDiode Floatingchanneldesignedforbootstrapoperation Outputsource/sinkcurrentcapabil

6ED2742S01Q

160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes

Features Bootstrapvoltage(VBnode)of+160V Floatingchanneldesignedforbootstrapoperation Integratedpowermanagementunit(PMU)with; oLinearpre-regulatortoenablewideinputVINrange oIntegratedchargepumpforstableVCC Integratedcurrentsenseamplifier(CSA)withse

6ED2742S01QXUMA1

160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes

Features Bootstrapvoltage(VBnode)of+160V Floatingchanneldesignedforbootstrapoperation Integratedpowermanagementunit(PMU)with; oLinearpre-regulatortoenablewideinputVINrange oIntegratedchargepumpforstableVCC Integratedcurrentsenseamplifier(CSA)withse

6ED2230S12T

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

6ED2230S12TXUMA1

Package：28-SOIC（0.295"，7.50mm 宽），24 引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：1200V THREE PHASE DRIVER