Medium Performance Compact EMI Power Inlet Filter

文件：255.27 Kbytes 页数：4 Pages

MACOM

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

Features  Infineon Thin Film SOI technology  Floating channel designed for bootstrap operation  Fully operational to +1200 V  Tolerant to negative transient voltage up to -100V (pulse widths up to 700ns)  Gate drive supply range from 12 V to 20 V  25 V VCC voltage supply (maximum)  3

文件：825.61 Kbytes 页数：22 Pages

Infineon

英飞凌

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

Features  Infineon Thin Film SOI technology  Floating channel designed for bootstrap operation  Fully operational to +1200 V  Tolerant to negative transient voltage up to -100V (pulse widths up to 700ns)  Gate drive supply range from 12 V to 20 V  25 V VCC voltage supply (maximum)  3

文件：825.61 Kbytes 页数：22 Pages

Infineon

英飞凌

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features  Infineon Thin-Film-SOI technology  Fully operational to +1200 V  Optimized for IGBT (insulated gate bipolar transistor) / SiC(Silicon carbide) MOSFET  Integrated Ultra‐fast Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capabil

文件：1.53883 Mbytes 页数：25 Pages

Infineon

英飞凌

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features  Infineon Thin-Film-SOI technology  Fully operational to +1200 V  Optimized for IGBT (insulated gate bipolar transistor) / SiC(Silicon carbide) MOSFET  Integrated Ultra‐fast Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capabil

文件：1.53883 Mbytes 页数：25 Pages

Infineon

英飞凌

160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated power management unit (PMU) with; o Linear pre-regulator to enable wide input VIN range o Integrated charge pump for stable VCC  Integrated current sense amplifier (CSA) with se

文件：2.07546 Mbytes 页数：36 Pages

Infineon

英飞凌

160 V pre-regulated three phase SOI gate driver with integrated charge pump, current sense amplifier, over-current protection, and bootstrap diodes

Features  Bootstrap voltage (VB node) of +160 V  Floating channel designed for bootstrap operation  Integrated power management unit (PMU) with; o Linear pre-regulator to enable wide input VIN range o Integrated charge pump for stable VCC  Integrated current sense amplifier (CSA) with se

文件：2.07546 Mbytes 页数：36 Pages

Infineon

英飞凌

1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP

文件：3.37502 Mbytes 页数：29 Pages

Infineon

英飞凌

1200 V, 3-phase gate driver for IGBT/ SiC module and discretes with integrated bootstrap diode and over current and more tighten UVLO protection in DSO-24 package

\n优势:\n• 3 Phase gate drive with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design\n• Optimized gate driver solution with design flexibility for IGBT/SiC based PIM, discrete switch\n• 100 V negative VS increased reliability /;

Infineon

英飞凌

用于电池供电 BLDC 电机控制器的 MOTIX™ 三相电机控制栅极驱动器 IC

\n优势:\n• 高功率密度\n• 更小的安装尺寸\n• 高耐用性和可靠性\n• 卓越的热管理\n• 可扩展性\n• 功能（100%占空比适用于手持工具）\n• 简单性（易于使用）\n• 无绳电动工具的一站式解决方案;

Infineon

英飞凌