6ED2230S12C中文资料英飞凌数据手册PDF规格书

特性 Features

 Infineon Thin Film SOI technology

 Floating channel designed for bootstrap operation

 Fully operational to +1200 V

 Tolerant to negative transient voltage up to -100V (pulse widths up to 700ns)

 Gate drive supply range from 12 V to 20 V

 25 V VCC voltage supply (maximum)

 3.3 V, 5 V, and 15 V input logic compatible

 Ultra-fast integrated bootstrap diodes

 Advanced input filter, inputs/outputs in phase

 Undervoltage lockout for both channels

 3.3 V, 5 V, and 15 V input logic compatible

 Over current protection with ±5 ITRIP threshold

 Fault reporting, automatic Fault clear and

Enable function on the same pin (RFE)

 Matched propagation delay for all channels

 Integrated 460 ns deadtime protection

 Shoot-through (cross-conduction) protection