6ED003L06-C2中文资料英飞凌数据手册PDF规格书

描述 Description

The device 6ED family – 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions.

Main features

• Thin-film-SOI-technology

• Maximum blocking voltage +600V

• Separate control circuits for all six drivers

• CMOS and LSTTL compatible input (negative logic)

• Signal interlocking of every phase to prevent cross-conduction

• Detection of over current and under voltage supply

• externally programmable delay for fault clear after over current detection

Product highlights

• Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology

• Ultra fast bootstrap diodes (except 6ED003L06-C2)

• shut down of all switches during error conditions

Typical applications

• Home appliances

• Fans, pumps

• General purpose drives