6ED2231S12T中文资料英飞凌数据手册PDF规格书

特性 Features

 Infineon Thin-Film-SOI technology

 Fully operational to +1200 V

 Optimized for IGBT (insulated gate bipolar transistor)

/ SiC(Silicon carbide) MOSFET

 Integrated Ultra‐fast Bootstrap Diode

 Floating channel designed for bootstrap operation

 Output source/sink current capability +0.35 A/‐0.65 A

 Tolerant to negative transient voltage up to -100 V

(Pulse width is up 700 ns) given by SOI-technology

 Undervoltage lockout for both channels

 3.3 V, 5 V, and 15 V input logic compatible

 Over current protection with ±5 ITRIP threshold

 Fault reporting, automatic Fault clear and

Enable function on the same pin (RFE)

 Matched propagation delay for all channels

 Integrated 460 ns deadtime protection

 Shoot-through (cross-conduction) protection

 VCC support up to 25 V

 2 kV HBM ESD