1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features  Infineon Thin-Film-SOI technology  Fully operational to +1200 V  Optimized for IGBT (insulated gate bipolar transistor) / SiC(Silicon carbide) MOSFET  Integrated Ultra‐fast Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capabil

文件：1.53883 Mbytes 页数：25 Pages

INFINEON

英飞凌

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Features  Infineon Thin-Film-SOI technology  Fully operational to +1200 V  Optimized for IGBT (insulated gate bipolar transistor) / SiC(Silicon carbide) MOSFET  Integrated Ultra‐fast Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capabil

文件：1.53883 Mbytes 页数：25 Pages

INFINEON

英飞凌

适用于 IGBT/SiC 模块和分立器件的 1200 V 三相栅极驱动器，带有集成自举二极管、过流保护和更严格的 UVLO 保护

\n优势:\n• 3 Phase gate drive with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design\n• Optimized gate driver solution with design flexibility for IGBT/SiC based PIM, discrete switch\n• 100 V negative VS increased reliability /;

Infineon

英飞凌

SOP28

INFINEON/英飞凌

上传：深圳市鼎欣微电子有限公司

SOP28

INFINEON/英飞凌

上传：深圳市钜韬电子有限公司