6ED2231S12T中文资料适用于 IGBT/SiC 模块和分立器件的 1200 V 三相栅极驱动器，带有集成自举二极管、过流保护和更严格的 UVLO 保护数据手册Infineon规格书

特性 Features

优势:
• 3 Phase gate drive with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design
• Optimized gate driver solution with design flexibility for IGBT/SiC based PIM, discrete switch
• 100 V negative VS increased reliability / robustness
• 50% lower level shift losses leads lower temperature operation and higher reliability
• Latch-up immune increased reliability
• Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches
• Under-voltage lockout provides protection at low supply voltage
• The DSO-24 package (DSO-28 with 4-pins removed) provides the best trade-off between small IC package and clearance distances