丝印：60N10；Package：TO-220C；60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.31 Kbytes 页数：10 Pages

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东海半导体

丝印：60N10；Package：TO-220C；60A 100V N-channel Enhancement Mode Power MOSFET

文件：719.21 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：60N10；Package：TO-220C；60A 100V N-channel Enhancement Mode Power MOSFET

文件：713.52 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：60N10；Package：TO-220C；60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.67 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：60N10；Package：TO-220C；60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.02 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：60N10；Package：TO-220C；60A 100V N-channel Enhancement Mode Power MOSFET

文件：715.16 Kbytes 页数：10 Pages

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东海半导体

丝印：60N100；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

General Features Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation VDS =100V,ID =60A RDS(ON) =9.2mΩ(typical

文件：1.2596 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：60N10F7；Package：PowerFLAT；N-channel 100 V, 0.0145 ??typ., 12 A, STripFET??VII DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package

Description This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features • Ultra low on-resistance • 100 avalanche tested Appli

文件：1.2922 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：60N10；Package：TO-220C；60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.31 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：60N10；Package：TO-220C；60A 100V N-channel Enhancement Mode Power MOSFET

文件：719.21 Kbytes 页数：10 Pages

WXDH

东海半导体