NCE60P04Y芯片代码芯片丝印反查-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE60P04Y	文件：384.14 Kbytes Page：7 Pages	丝印：60P04Y；Package：SOT-23-3L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON) 文件：384.14 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
RM60P04Y	文件：812.25 Kbytes Page：7 Pages	丝印：60P04Y；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET General Features VDS =-60V,ID =-4A RDS(ON) 文件：812.25 Kbytes 页数：7 Pages	RECTRON 丽正国际	RECTRON
LCE60P04Y	文件：818.33 Kbytes Page：6 Pages	丝印：60P04Y；Package：SOT-23-3L；LCE P-Channel Enhancement Mode Power MOSFET 文件：818.33 Kbytes 页数：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
LMT3L4P06	文件：832.5 Kbytes Page：6 Pages	丝印：60P04Y；Package：SOT-23-3L；LCE P-Channel Enhancement Mode Power MOSFET 文件：832.5 Kbytes 页数：6 Pages	LEIDITECH 雷卯电子	LEIDITECH

更多60P04Y供应商更新时间2025-9-14 9:00:00