丝印：3N1；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：3N1；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：3N1；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 页数：16 Pages

TOSHIBA

东芝

丝印：3N1012；Package：PG-TO263-3-2；OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：192.39 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：3N10L26；Package：PG-TO252-3-11；OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：188.79 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：3N1012；Package：PG-TO262-3-1；OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：192.39 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：3N1012；Package：PG-TO220-3-1；OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：192.39 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：3N12030；Package：PG-HDSOP-16；MOSFET OptiMOSTM3 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • 100 avalanche tested • Optimized for motor drives and battery powered applications. • Optimized for top side cooling. • Ideal for battery management switch application • Su

文件：1.61972 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：3N150；Package：TO-3PF；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

文件：677.14 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：3N150；Package：TO-247；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

文件：677.14 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体