Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device.

文件：26.12 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 1500 pF T

文件：42.07 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ci

文件：236.33 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features Low on-resistance RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 45 m MAX. (VGS = 4.0 V, ID = 15 A) Low Ciss : Ciss = 1500 pF TYP. Built-in gate protection diode

文件：46.47 Kbytes 页数：1 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ci

文件：236.33 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 1500 pF T

文件：42.07 Kbytes 页数：4 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built

文件：42.08 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ci

文件：241.76 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17A) RDS(on)2 = 36 m MAX. (VGS = 4.0 V, ID = 17A) ● Low Ciss : Ciss = 2100 pF TYP. ● Built-in gate protection diode

文件：46.75 Kbytes 页数：1 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ci

文件：241.76 Kbytes 页数：10 Pages

RENESAS

瑞萨