SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built

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NEC

瑞萨

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)

Switching Regulator, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪ = 17 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 150 V) • Enhancement mode: Vth = 0.8~2.0 V (VDS = 10

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TOSHIBA

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MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 250 V) • Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V

文件：225.97 Kbytes 页数：6 Pages

TOSHIBA

东芝

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MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Regulator, DC-DC Converter Applications Motor Drive Applications

Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 30 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V

文件：320.05 Kbytes 页数：6 Pages

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isc N-Channel MOSFET Transistor

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SWITCHING N-CHANNEL POWER MOS FET

文件：236.93 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

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