audio frequency power amplifier application

AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage: VDSS = −180 V • High Forward Transfer Admittance: |Yfs| = 4.0 S (Typ.)

文件：113.53 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)

AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage: VDSS = −180 V • High Forward Transfer Admittance: |Yfs| = 4.0S (Typ.)

文件：91.65 Kbytes 页数：1 Pages

TOSHIBA

东芝

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • 250 V rating high withstand voltage • Low on-state resistance: RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A) • Low input capacitance: Ciss = 470 pF T

文件：121.35 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • 250 V rating high withstand voltage • Low on-state resistance: RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A) • Low input cap

文件：231.97 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES Low On-Resistance RDS(on) = 0.8 W MAX. (@ VGS = –10 V, ID = –3.0 A) Low Ciss Ciss = 1040 pF TYP. High Avalanche

文件：217.79 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on)= 0.8 ΩMAX. (@ VGS= –10 V, ID= –3.0 A) • Low CissCiss= 1040 pF TYP. • High Avalanche Capability Ratings • Isolated TO-2

文件：120.71 Kbytes 页数：8 Pages

NEC

瑞萨

Audio Frequency Power Amplifier Application

文件：131.87 Kbytes 页数：3 Pages

TOSHIBA

东芝

Audio Frequency Power Amplifier Application

文件：131.87 Kbytes 页数：3 Pages

TOSHIBA

东芝

SWITCHING P-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications.FEATURES\n• 250 V rating high withstand voltage\n• Low on-state resistance:\n  RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A)\n• Low input capacitance: Ciss = 470 pF TYP.\n• Narrow gate • 250 V rating high withstand voltage\n• Low on-state resistance:\n  RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A)\n• Low input capacitance: Ciss = 470 pF TYP.\n• Narrow gate cut-off voltage width:\n   VGS(off) = −5.5 to −4.0 V\n• Built-in gate protection diode\n• Full-mold package for easy mounti;

Renesas

瑞萨