SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • 250 V rating high withstand voltage • Low on-state resistance: RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A) • Low input capacitance: Ciss = 470 pF T

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • 250 V rating high withstand voltage • Low on-state resistance: RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A) • Low input cap

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SWITCHING P-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications.FEATURES\n• 250 V rating high withstand voltage\n• Low on-state resistance:\n  RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A)\n• Low input capacitance: Ciss = 470 pF TYP.\n• Narrow gate • 250 V rating high withstand voltage\n• Low on-state resistance:\n  RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A)\n• Low input capacitance: Ciss = 470 pF TYP.\n• Narrow gate cut-off voltage width:\n   VGS(off) = −5.5 to −4.0 V\n• Built-in gate protection diode\n• Full-mold package for easy mounti;

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TO263

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上传：深圳市正纳电子有限公司

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TO-220-3

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