2SJ448中文资料瑞萨数据手册PDF规格书

DESCRIPTION

The 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications.

FEATURES

• 250 V rating high withstand voltage

• Low on-state resistance:

RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A)

• Low input capacitance: Ciss = 470 pF TYP.

• Narrow gate cut-off voltage width:

VGS(off) = −5.5 to −4.0 V

• Built-in gate protection diode

• Full-mold package for easy mounting

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS –250 V

Gate to Source Voltage (VDS = 0 V) VGSS m 30 V

Drain Current (DC) (TC = 25°C) ID(DC) m 4.0 A

Drain Current (pulse) Note1 ID(pulse) m 16 A

Total Power Dissipation (TC = 25°C) PT1 30 W

Total Power Dissipation (TA = 25°C) PT2 2.0 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg –55 to +150 °C

Single Avalanche Current Note2 IAS –4.0 A

Single Avalanche Energy Note2 EAS 80 mJ