MOS FIELD EFFECT TRANSISTOR

DESCRIPTION\nThe 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications.\nFEATURES\n• Low On-Resistance\n  RDS(on)= 0.8 ΩMAX. (@ VGS= –10 V, ID= –3.0 A)\n• Low CissCiss= 1040 pF TYP.\n• High Avalanche Capability Ratings\n• Isolated TO-220 Package • Low On-Resistance\n  RDS(on)= 0.8 ΩMAX. (@ VGS= –10 V, ID= –3.0 A)\n• Low CissCiss= 1040 pF TYP.\n• High Avalanche Capability Ratings\n• Isolated TO-220 Package;

Renesas

瑞萨

P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)

Toshiba

东芝