SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on)= 0.8 ΩMAX. (@ VGS= –10 V, ID= –3.0 A) • Low CissCiss= 1040 pF TYP. • High Avalanche Capability Ratings • Isolated TO-2

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES Low On-Resistance RDS(on) = 0.8 W MAX. (@ VGS = –10 V, ID = –3.0 A) Low Ciss Ciss = 1040 pF TYP. High Avalanche

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RENESAS

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION\nThe 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications.\nFEATURES\n• Low On-Resistance\n  RDS(on)= 0.8 ΩMAX. (@ VGS= –10 V, ID= –3.0 A)\n• Low CissCiss= 1040 pF TYP.\n• High Avalanche Capability Ratings\n• Isolated TO-220 Package • Low On-Resistance\n  RDS(on)= 0.8 ΩMAX. (@ VGS= –10 V, ID= –3.0 A)\n• Low CissCiss= 1040 pF TYP.\n• High Avalanche Capability Ratings\n• Isolated TO-220 Package;

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TO263

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上传：深圳市正纳电子有限公司

ON
TO-220-3

ON

上传：深圳市芯峰微电子科技有限公司