Silicon P-Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

文件：40.69 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

文件：71.09 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

文件：71.09 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

文件：71.09 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

文件：40.69 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

文件：71.09 Kbytes 页数：6 Pages

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -7A@ TC=25℃ ·Drain Source Voltage -VDSS= -160V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1Ω(Max)@VGS = -10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：313.58 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon P-Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

文件：40.69 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

文件：71.09 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

文件：71.09 Kbytes 页数：6 Pages

RENESAS

瑞萨