P-CHANNEL MOS FET FOR SWITCHING

P-CHANNEL MOS FET FOR SWITCHING The 2SJ197, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output ICs having a 5V power source. AS the MOS FET has low on-state resistance and excellent switching characteristic, it is suitable for driving actuators such

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING

文件：527.74 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS Fied Effect Transistor

Features ● Directly driven by Ics having a 5V poer supply. ● Has low on-state resistance RDS(on)=1.5 Ω MAX.@VGS=-4.0V,ID=-0.5A RDS(on)=1.0 Ω MAX.@VGS=-10V,ID=-0.5A

文件：46.94 Kbytes 页数：1 Pages

KEXIN

科信电子

P-Channel 60-V (D-S) MOSFET

文件：1.67366 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Power MOSFETs-Power MOSFETs for Automotive

Renesas

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P-Channel Enhancement MOSFET

Application | © PWM applications Load switch « Power management

文件：3.0873 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-Channel MOSFET

文件：1.31282 Mbytes 页数：4 Pages

KEXIN

科信电子

场效应管（MOSFEET)

Techpublic

台舟电子