Silicon P-Channel Junction FET

Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 ■ Features ● Low ON-resistance ● Low-noise characteristics

文件：31.76 Kbytes 页数：2 Pages

Panasonic

松下

For General Switching

Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 ■ Features ● Low ON-resistance ● Low-noise characteristics

文件：47.34 Kbytes 页数：3 Pages

Panasonic

松下

For Switching

Silicon P-Channel Junction FET For switching Complementary to 2SK1104 ■ Features ● Low ON-resistance ● Low-noise characteristics

文件：72.04 Kbytes 页数：3 Pages

Panasonic

松下

Silicon P-Channel Junction FET

Silicon P-Channel Junction FET For switching Complementary to 2SK1104 ■ Features ● Low ON-resistance ● Low-noise characteristics

文件：31.17 Kbytes 页数：2 Pages

Panasonic

松下

P-CHANNEL MOS FET FOR SWITCHING

P-CHANNEL MOS FET FOR SWITCHING The 2SJ165, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICx having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driven actuators

文件：384.19 Kbytes 页数：6 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOF

P-CHANNEL MOS FET FOR SWITCHING

文件：548.39 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

文件：576.17 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS Fied Effect Transistor

Features • Directly driven by Ics having a 5V poer supply. • Not necessary to consider dreving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor.

文件：44.49 Kbytes 页数：1 Pages

KEXIN

科信电子

P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：350.13 Kbytes 页数：6 Pages

NEC

瑞萨

P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS)

High Speed Switching Applications Analog Switch Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) • Low on resistance: RDS (ON) = 1.3 Ω (typ.) • Enhancement-mode • Complementary to 2SK1

文件：178.69 Kbytes 页数：4 Pages

TOSHIBA

东芝