Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be installed to the heat sink

文件：54.57 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Full-pack package which can be installed to the heat sink

文件：54.57 Kbytes 页数：3 Pages

PANASONIC

松下

丝印：C7；Package：TO-220；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·High Collector Current:: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1334 APPLICATIONS ·Designed for low frequency power amplifier applications.

文件：254.7 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C7；Package：TO-220；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1779 is high hFE transistor. It is suitable for use to operate from IC without predriver, such as hammer or motor driver.

文件：137.18 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1780 is high hFE transistor, built-in a zener diode at B-C. It is suitable for use to operate from IC without predriver, such as hammer or motor driver.

文件：142.18 Kbytes 页数：2 Pages

NEC

瑞萨

NPN Silicon Plastic Encapsulated Transistor

0.8A, 40V NPN Silicon Plastic Encapsulated Transistor FEATURES Very low VCE(sat).VCE(sat)

文件：78.24 Kbytes 页数：3 Pages

SECOS

喜可士

SOT-23 Plastic-Encapsulate Transistors

FEATURES Very low VCE(sat). VCE(sat)

文件：1.64668 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：270.48 Kbytes 页数：5 Pages

PANJIT

強茂