丝印：D81；Package：SOT-23；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：270.48 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：D81；Package：SOT-23；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：270.48 Kbytes 页数：5 Pages

PANJIT

強茂

NPN Silicon Plastic Encapsulated Transistor

NPN Silicon Plastic Encapsulated Transistor FEATURES Very low VCE(sat).VCE(sat)

文件：702.06 Kbytes 页数：2 Pages

SECOS

喜可士

Medium Power Transistor

Medium Power Transistor Features Very Low VCE(sat).VCE(sat)= -0.1V(Typ.) IC/IB= 500mA / 50mA High current capacity in compact package.

文件：37.48 Kbytes 页数：1 Pages

KEXIN

科信电子

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：93.29 Kbytes 页数：4 Pages

ROHM

罗姆

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：59.81 Kbytes 页数：4 Pages

ROHM

罗姆

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：59.81 Kbytes 页数：4 Pages

ROHM

罗姆

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：59.81 Kbytes 页数：4 Pages

ROHM

罗姆

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High BVCEO ● Complements the 2SB1198

文件：571.13 Kbytes 页数：3 Pages

JIANGSU

长电科技

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

文件：90.47 Kbytes 页数：3 Pages

UTC

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