NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1700 is NPN silicon epitaxial darlington transistor designed for pulse motor driver, printer driver, solenoid driver. FEATURES ● High DC Current Gain ● Zener Diode between Collector and Base for Absorbing Surge Voltage is Built-in. ● Reverse Diode between Collector and Emit

文件：126.41 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1701 is NPN silicon epitaxial darlington transistor designed for pulse motor driver, printer driver, solenoid driver. FEATURES ● High DC Current gain. ● Zener Diode between Collector and Base for Absorbing Surge Voltage is built-in. ● Reverse Diode between Collector and

文件：117.28 Kbytes 页数：2 Pages

NEC

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1702 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver.

文件：321.86 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1702 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver.

文件：197.78 Kbytes 页数：4 Pages

NEC

瑞萨

Silicon NPN epitaxial planar type

For power switching Complementary to 2SB1154 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw

文件：92.88 Kbytes 页数：4 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Good Linearity of hFE • Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6A • Complement to Type 2SB1154 APPLICATIONS • Designed for power switching applications

文件：255.75 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage-: VCE(sat)= 0.5V(Max.)@ IC= 7A ·Complement to Type 2SB1155 APPLICATIONS ·Designed for power switching applications

文件：255.75 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING

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文件：174.44 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planar type

For power switching Complementary to 2SB1156 ■Features •Low collector-emitter saturation voltage VCE(sat) •Satisfactory linearity of forward current transfer ratio hFE •Large collector current IC •Full-pack package which can be installed to the heat sink with one screw

文件：93.37 Kbytes 页数：4 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO = 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 8A ·Complement to Type 2SB1156 APPLICATIONS ·Designed for power switching applications

文件：254.45 Kbytes 页数：2 Pages

ISC

无锡固电